Модель: SPL
Specification of Sapphire Substrate | |
Item | Specification |
2" | |
Material | High Purity,Monocrystaline,AL2O3 |
Diameter | 50.8mm~51.0mm |
Thickness | 420-440μm or other dimension |
Orientation | C-plane (0001)off angle 0.2° ± 0.1°(M-axis); 0± 0.1°(A-axis) |
Flat length | 16±1 mm or according to customer required |
Flat Location | A-axis[11-20]±0.2° |
Front Side Surface | Epi-Ready Polished |
Roughness of front side surface | Ra |
Back side surface | Standard 60/40 |
Edge Chamfering | T-type/R-type |
TTV | ≤5μm(FRT 3/25) |
LTV | 5mm*5mm≤1.5μm |
BOW | |Bow|≤3 μm |
Warp | ≤8 μm |
Package | 100 Clean Room, Vacuum packing |
Appearance | No color, polycrystalline, twin crystal, etc. |
Package | Vacuum packing into 25 pcs cassettes |
Laser mark | Front side or back side according to customer required |
Группа Продуктов : Продукция Сапфир > Сапфировые Пластины